FeFET – WindowsTechs.com

New Type of Ferroelectric Memory Constructed Using α-In2Se3 Material

Posted on October 20, 2023 by Maya Posch

Electrically controlled behaviors of the lateral α-In2Se3 Fe-FET. a) Hysteresis loop of Id–Vd curve of the planar Fe-FET with 29 nm thick α-In2Se3. b) Band diagram of the ferroelectric switching mechanism. (Credit: Miao et al., 2023)

The ferroelectrical properties of materials have found a variety of uses over the years, including in semiconductor applications. Ferroelectric memory is among the most interesting and possibly world-changing as it …read more Continue reading New Type of Ferroelectric Memory Constructed Using α-In2Se3 Material→